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APT50M85JVR

Stock Available Pri Referans (Nan dola ameriken)
20+
$34.05
Manifakti Nimewo Pati:
APT50M85JVR
Manifakti / Brand
Microchip Technology
Pati nan Deskripsyon:
MOSFET N-CH 500V 50A ISOTOP
Datasheets:
APT50M85JVR(1).pdfAPT50M85JVR(2).pdfAPT50M85JVR(3).pdfAPT50M85JVR(4).pdf
Plon gratis Status / RoHS Status:
Stock kondisyon:
Nouvo orijinal, Stock Disponib.
Bato de:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Enquiry sou entènèt

Tanpri ranpli tout jaden obligatwa yo ak enfòmasyon kontak ou.Klike sou "DEMANDE YO"Nou pral kontakte ou yon ti tan nan imèl. Oswa voye yon imèl nou: info@mitsubishi-igbt.com
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Manifakti
Mande Kantite
Pri Sib(USD)
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Tanpri antre kòd Verify la epi klike sou "Soumèt"
Nimewo Pati APT50M85JVR
Manifakti / Brand Microchip Technology
Kategori Diskresyon semiconductor pwodwi > Transistors - FETs, MOSFETs - Single
Deskripsyon MOSFET N-CH 500V 50A ISOTOP
Plon gratis Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4V @ 1mA
Teknoloji MOSFET (Metal Oxide)
Founisè Aparèy pake ISOTOP®
Seri POWER MOS V®
Rds Sou (Max) @ Id, Vgs 85mOhm @ 500mA, 10V
Pake / Ka SOT-227-4, miniBLOC
Pakèt Tube
Mounting Kalite Chassis Mount
Kapasite Antre (Ciss) (Max) @ Vds 10800 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 535 nC @ 10 V
Fèt tip N-Channel
FET Feature -
Drenaj Sous Voltage (Vdss) 500 V
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)
Nimewo pwodwi baz APT50M85

Anbalaj

Nou ofri bon jan kalite ki pi wo a, ki pi ekonomikman pri anbalaj pwoteksyon estatik ki disponib. Avèk 40% transparans limyè, itallows pou idantifikasyon fasil nan IC a (sikwi entegre) ak PCB a (printscircuit ankadreman). Tretman ki pi dirab ki gen antye metal yo bay pèfòmans FaradayCage ki nesesè pou yo byen pwoteje eleman sa yo kont chaj otomatik yo.

Tout pwodwi yo pral procesna nan anti-staticbag. Bato ak pwoteksyon antistatik ESD.
Eksepte pake ESD anbalaj a pral sèvi ak enfòmasyon konpayi nou an: Pati mòmon, mak ak Kantite.
Nou pral enspekte tout byen yo anvan chajman, asire tout pwodwi yo nan bon kondisyon epi asire ke pati yo se nouvo orijinalmatch fichye.
Apre tout machandiz yo asire pa gen okenn pwoblèm afterpacking, nou pral procesna san danje epi voye pa eksprime mondyal. Li exhibitsexcellent bon rezistans ak dlo ansanm ak entegrite bon sele.
Nou ka ofri sèvis livrezon atravè lemond eksprime, tankou DHLor FedEx oswa TNT oswa UPS oswa lòt komisè pou chajman.

Global Shipment pa DHL / FedEx / TNT / UPS

Frè anbak referans DHL / FedEx
1). Ou ka ofri eksprime kont livrezon ou pou chajman, si ou pa gen okenn kont eksprime pou chajman, nou ka ofri inadvance kont nou an.
2). Sèvi ak kont nou pou chajman, chaj chajman (Referans DHL / FedEx, diferan peyi gen pri diferan.)
Chaj chajman: (Referans DHL ak FedEx)
Pwa (KG): 0.00kg-1.00kg Pri (USD $): USD $ 60.00
Pwa (KG): 1.00kg-2.00kg Pri (USD $): USD $ 80.00
* Pri a nan pri a se referans ak DHL / FedEx. Chaj detay yo, tanpri kontakte nou. Diferan peyi chaj eksprime yo diferan.



APT50M85JVR Pwodwi Detay yo:

Title: APT50M85JVR: The Latest IGBT Module With Enhanced Features for High Power Electronic Devices! If you are looking for the latest IGBT module to power up your high power electronic devices, the APT50M85JVR might be the one for you! With its advanced features and performance parameters, this IGBT module is designed to meet the requirements of modern electronics and industrial applications. Overview: APT50M85JVR is a MOSFET N-CH IGBT module with a maximum output voltage of 500V and a maximum output current of 50A. It is a premium quality IGBT module designed to deliver high efficiency and accuracy in complex industrial applications. The package type is an ISOTOP, which is ideal for high-density PCB designs. Main Features: The APT50M85JVR has a high input impedance, low on-state voltage drop, and fast switching speed, which improves efficiency and reduces power loss. The product also has a high safe operating area, which guarantees reliable operation under high current, voltage, and temperature conditions. Performance Parameters: The IGBT module has a maximum output power of 425W and a maximum output frequency of 30kHz. With a maximum operating temperature of 150°C, the product can effectively operate in harsh environments without breaking down. Applications: The APT50M85JVR is suitable for use in various industrial applications, including power supplies, motor drives, welding machines, and inverters. It is also a perfect fit for electric vehicle charging stations and renewable energy systems requiring high power density. Integrated Circuits: The APT50M85JVR has different types of integrated circuits that include digital, analog, mixed signal, and RF circuits. These circuits function collectively to improve device performance and efficiency. Manufacturing Process: The manufacturing process for the APT50M85JVR involves various steps, such as chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. These steps help to ensure quality and reliability in the product. Packaging and Testing: The manufacturing process also includes appropriate packaging and testing of the finished product to ensure component quality. The packaging ensures that the IGBT module is well protected during transportation and storage, while testing guarantees high-performance quality. In summary, the APT50M85JVR is the latest IGBT module that delivers high efficiency, accuracy, and reliability. With its advanced features, performance parameters, and different types of integrated circuits, it is ideal for high power electronic devices used in various industrial applications. If you want to experience the full capabilities of the IGBT module, get the APT50M85JVR today and experience an unparalleled level of performance for your electronic devices!

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